| Mfg Part Number: IDT6116LA120DB | NSN : 5962-01-377-9633 |
| NIIN : 013779633 | CAGE Code : 61772 |
| Manufacturer: Integrated Device Technology Inc | Item Name : Microcircuit Memory |
| FSC : 5962 Microcircuits Electronic |
Thank you for your interest in IDT6116LA120DB part number. At ASAP Domain 360, we offer an unparalleled inventory of premium NSN components. IDT6116LA120DB part is listed with the description of Microcircuit Memory, along with the NSN 5962-01-377-9633. ASAP Domain 360 has a strict No-China Sourcing pledge, and we only stock our NSN parts from reliable manufacturers like Integrated Device Technology Inc. If you are interested in initiating the purchasing process for IDT6116LA120DB part, please fill out and submit the Instant RFQ form provided below. Upon receiving your request, an account manager will contact you in 15 minutes or less with a personalized quotation for comparison.
ASAP Domain 360 offers many high-quality NSN parts available for immediate purchase. A National Stock Number (NSN) is a numeric code used to classify components manufactured, bought, and sold in the federal supply system. Each NSN is unique, and the various numbers can be used to describe qualities like the item's country of origin and federal supply class. This system is used by the United States DOD and every other NATO-allied nation to eliminate confusion and the duplication of orders. At ASAP domain, finding your required NSN part is simple. Furthermore, this component, 5962-01-377-9633, is also listed with its CAGE Code 61772 belonging to Integrated Device Technology Inc for ease of search.
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-377-9633 Item Description: Microcircuit Memory | 5962 | 013779633 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| Idt6116la120db | 5 | 1 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 22 INPUT |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CSWJ | (NON-CORE DATA) WORD QUANTITY | 2048 |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| NHCF | NUCLEAR HARDNESS CRITICAL FEATURE | HARDENED |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| CRHL | (NON-CORE DATA) BIT QUANTITY | 16384 |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZER | MEMORY DEVICE TYPE | RAM |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CBBL | FEATURES PROVIDED | BURN IN AND ELECTROSTATIC SENSITIVE AND PROGRAMMED AND MONOLITHIC |
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